IPW60R180C7_15 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor

600VCoolMOS™C7PowerTransistor
IPW60R180C7
Diagram9:Typ.transfercharacteristics
70
60
50
40
30
20
10
25 °C
150 °C
Diagram10:Typ.gatecharge
12
10
8
6
4
2
120 V
400 V
0
0
2
4
6
8
VGS[V]
ID=f(VGS);VDS=20V;parameter:Tj
10
12
0
0
5
10
15
20
25
30
Qgate[nC]
VGS=f(Qgate);ID=5.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
10²
Diagram12:Avalancheenergy
60
50
10¹
40
125 °C _{25 °C}
30
10⁰
20
10
10^-1
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00
25
50
75
100
125
150
VSD[V]
Tj[°C]
IF=f(VSD);parameter:Tj
EAS=f(Tj);ID=3.3A;VDD=50V
Final Data Sheet
10
Rev.2.0,2015-05-08