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| IPW50R190CE_15 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Metal Oxide Semiconductor Field Effect Transistor | |||
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500VCoolMOSâ¢CEPowerTransistor
IPW50R190CE,IPP50R190CE
Typ.capacitances
104
Typ.Cossstoredenergy
7
6
Ciss
103
5
4
102
Coss
3
2
101
Crss
1
100
0
100
200
300
400
500
VDS[V]
0
0
100
200
300
400
500
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Eoss=f(VDS)
Forwardcharacteristicsofreversediode
102
101
125 °C
25 °C
100
10-1
0.4
0.6
0.8
1.0
1.2
1.4
VSD[V]
IF=f(VSD);parameter:Tj
Final Data Sheet
10
Rev.2.1,2015-08-20
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