IPL60R210P6 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Very high commutation ruggedness

600VCoolMOS™P6PowerTransistor
IPL60R210P6
Diagram9:Typ.transfercharacteristics
60
Diagram10:Typ.gatecharge
10
9
50
25 °C
8
7
120 V
480 V
40
6
30
5
150 °C
4
20
3
2
10
1
0
0
0
2
4
6
8
10
12
0
VGS[V]
10
20
30
40
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=9.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
10²
25 °C
125 °C
Diagram12:Avalancheenergy
450
400
350
10¹
300
250
200
10⁰
150
100
50
10^-1
0.0
0.5
1.0
1.5
VSD[V]
IF=f(VSD);parameter:Tj
0
2.0
25
50
75
100
125
150
Tj[°C]
EAS=f(Tj);ID=3.3A;VDD=50V
Final Data Sheet
10
Rev.2.0,2014-05-16