IPL60R1K5C6S Datasheet, PDF (10/14 Pages) Infineon Technologies AG – Very high commutation ruggedness

600VCoolMOS™C6PowerTransistor
IPL60R1K5C6S
Diagram13:Drain-sourcebreakdownvoltage
700
Diagram14:Typ.capacitances
10⁴
680
660
10³
640
Ciss
620
10²
600
580
Coss
10¹
560
540
Crss
520
-75 -50 -25 0 25 50 75 100 125 150 175
Tj[°C]
10⁰
0
100
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.0,2014-07-08