IKP40N65H5_15 Datasheet, PDF (10/18 Pages) Infineon Technologies AG – 650V DuoPack IGBT and diode High speed switching series fifth generation

1000
td(off)
tf
td(on)
tr
100
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
100
10
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
5.5
typ.
min.
5.0
max.
8
Eoff
Eon
7
Ets
4.5
6
4.0
5
3.5
4
3.0
3
2.5
2
2.0
1.5
1
1.0
0
25
50
75
100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
0
0
20
40
60
80
100 120
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.4mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
10
Rev.2.1,2015-05-06