IHW20N120R5 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – Reverse Conducting IGBT with monolithic body diode

ResonantSwitchingSeries
IHW20N120R5
3.0
Eoff
2.5
2.0
1.7
Eoff
1.5
1.3
1.1
1.5
0.9
0.7
1.0
0.5
0.5
0.3
0.0
10 15 20 25 30 35 40 45 50
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=20A,dynamictestcircuitin
Figure E)
0.1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=20A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
3.0
Eoff
2.5
20
240V
18
960V
16
14
2.0
12
1.5
10
8
1.0
6
4
0.5
2
0.0
400 500 600 700 800 900 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 25 50 75 100 125 150 175 200 225 250
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=20A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Figure 16. Typicalgatecharge
(IC=20A)
10
Rev.2.1,2015-01-26