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BTT6050-2EKA_15 Datasheet, PDF (10/54 Pages) Infineon Technologies AG – Smart High-Side Power Switch
BTT6050-2EKA
General Product Characteristics
Table 2 Absolute Maximum Ratings (cont’d)1)
TJ = -40 °C to +150 °C; (unless otherwise specified)
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note /
Number
Test Condition
Maximum energy dissipation EAS
Single pulse (one channel)
Voltage at power transistor VDS
Currents
–
–
55
mJ IL(0) = 4 A
P_4.1.23
TJ(0) = 150 °C
VS = 28 V
–
–
65
V
–
P_4.1.26
Current through ground pin I GND
-20 –
-150
20
mA –
20
t < 2 min
P_4.1.27
Temperatures
Junction temperature
Storage temperature
ESD Susceptibility
TJ
TSTG
-40 –
-55 –
150 °C –
150 °C –
P_4.1.28
P_4.1.30
ESD susceptibility (all pins)
ESD susceptibility OUT Pin
vs. GND and VS connected
ESD susceptibility
ESD susceptibility pin
(corner pins)
VESD
VESD
VESD
VESD
-2
–
-4
–
-500 –
-750 –
2
kV
4) HBM
4
kV
4) HBM
500 V
750 V
5) CDM
5) CDM
P_4.1.31
P_4.1.32
P_4.1.33
P_4.1.34
1) Not subject to production test. Specified by design.
2) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
3) Threshold limit for short circuit failures : 100ppm. Please refer to the legal disclaimer for short circuit capability at the end
of this document.
4) ESD susceptibility HBM according to ANSI/ESDA/JEDEC JS-001-2010
5) “CDM” ESDA STM5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
PROFET™+ 24V
10
Rev. 1.1, 2015-03-04