BTS7750G Datasheet, PDF (10/16 Pages) Infineon Technologies AG – TrilithIC

BTS 7750 G
3.3 Electrical Characteristics (cont’d)
I_SH1 = I_SH2 = I_SL1 = I_SL2 = 0 A; – 40 C < T_j < 150 C; 8 V < V_S < 18 V
unless otherwise specified
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
Output stages
Inverse diode of high-side V_FH
–
switch; Forward-voltage
Inverse diode of lowside V_FL
–
switch; Forward-voltage
Static drain-source
on-resistance of highside
switch
R – _{DS ON H}
Static drain-source
on-resistance of lowside
switch
R – _{DS ON L}
Static path on-resistance R_{DS ON} –
0.8 1.2 V I_FH = 3 A
0.8 1.2 V I_FL = 3 A
70 90 mτ I_SH = 1 A
T_j = 25 C
45 60 mτ I_SL = 1 A;
V_GL = 5 V
T_j = 25 C
–
285
mτ
R + R _{DS ON H}
DS ON L
I_SH = 1 A;
Short Circuit of highside switch to GND
Initial peak SC current
I_{SCP H}
14
15
18
A
T_j = – 40 °C
10 12 15 A T_j = + 25 °C
7
8.5 10 A T_j = + 150 °C
Short Circuit of highside switch to V_S
Output pull-down-resistor R_O
8
15 35 kτ V_DSL = 3 V
Short Circuit of lowside switch to V_S
Initial peak SC current
I_{SCP L}
21 28 34 A
16 22 27 A
11 14 18 A
T_j = – 40 C
T_j = 25 C
T_j = 150 C
Data Sheet
10
2001-02-01