BTS3125TF Datasheet, PDF (10/39 Pages) Infineon Technologies AG – Smart Low-Side Power Switch

HITFET - BTS3125TF
Smart Low-Side Power Switch
General Product Characteristics
30
25
20
15
10
5
0
0,000001 0,00001 0,0001 0,001 0,01 0,1
1
10
100 1000 10000
t_p. [s]
Figure 7
Typical transient thermal impedance Z_thJA = f(t_p), T_A = 85°C
Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The
product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner
copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Device is dissipating 1 W power.
120
JEDEC 1s0p / 600mm²
100
JEDEC 1s0p / 300mm²
JEDEC 1s0p / footprint
80
60
40
20
0
0,000001 0,00001 0,0001 0,001 0,01 0,1
1
10
100 1000 10000
t_p. [s]
Figure 8
Typical transient thermal impedance Z_thJA = f(t_p), Ta = 85°C
Value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board. Device is
dissipating 1 W power.
Datasheet
10
Rev. 1.0
2016-06-01