BTM7745G Datasheet, PDF (10/24 Pages) Infineon Technologies AG – High Current H-Bridge Trilith IC 3G

High Current H-Bridge
BTM7745G
Block Description and Characteristics
6.2
Power Stages
The power stages of the BTM7745G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance R_ON is dependent on the supply voltage V_S as well as on the junction temperature T_j. The
typical on state resistance characteristics are shown in Figure 7.
High Side Switch
250
Low Side Switch
400
350
200
300
T_j = 150°C
150
T_j = 150°C
250
200
100
T_j = 25°C
T_j = 25°C
150
T_j = -40°C
T_j = -40°C
100
50
50
0
4
8
12 16 20 24 28
V_S [V]
0
4
8 12 16 20 24 28
V_S [V]
Figure 7 Typical On State Resistance vs. Supply Voltage
Data Sheet
10
Rev. 1.0, 2010-05-28