BGA7H1N6 Datasheet, PDF (10/19 Pages) Infineon Technologies AG – Silicon Germanium Low Noise Amplifier for LTE

2
Electrical Characteristics
BGA7H1N6
Electrical Characteristics
2.1
Measured RF Characteristics Band 7
Table 4
Electrical Characteristics:¹⁾ T_A = 25 °C, V_CC = 1.8 V, V_PON,ON = 1.8 V, V_PON,OFF = 0 V,
f = 2620 - 2690 MHz
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Supply voltage
Supply current
V_CC
1.5
–
3.3
V
–
I_CC
–
4.7
5.7
mA ON-mode
–
0.2
3
μA OFF-mode
Power On voltage
V_pon
1.0
–
0
–
Vcc
V
ON-mode
0.4
V
OFF-mode
Power On current
I_pon
–
5
–
–
Insertion power gain
Noise figure²⁾
|S₂₁|²
NF
11.0 12.5
–
0.65
Input return loss³⁾
RL_in
8
11
Output return loss³⁾
RL_out
10
20
Reverse isolation³⁾
1/|S₁₂|²
16
20
Power gain settling time⁴⁾⁵⁾
t_S
–
4
Inband input 1dB-compression IP_1dB
-8
-4
point³⁾
Inband input 3^rd-order intercept IIP₃
point⁶⁾³⁾
+1
+6
Stability⁵⁾
k
–
>1
1) Based on the application described in chapter 3
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
6) Input power = -30 dBm for each tone
10
1
14.0
1.2
–
–
–
7
–
–
–
μA
μA
dB
dB
dB
dB
dB
μs
dBm
ON-mode
OFF-mode
–
Z_S = 50 Ω
–
–
–
OFF- to ON-mode
–
dBm
f₁ = 2650 MHz
f₂ = f₁ +/-10 MHz
f = 20 MHz ... 10 GHz
Data Sheet
10
Revision 3.1 (Min/Max), 2014-02-11