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BFP450_10 Datasheet, PDF (10/27 Pages) Infineon Technologies AG – High Linearity Low Noise Si NPN RF Transistor
4
Electrical Characteristics
BFP450
Electrical Characteristics
4.1
DC Characteristics
Table 3 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4.5
Collector emitter leakage current
ICES
–
–
Collector base leakage current
Emitter base leakage current
DC current gain
ICBO
–
IEBO
–
hFE
60
50
Values
Typ. Max.
5
–
–
10
1
30
1
30
0.1
3
95
130
85
120
Unit Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
µA VCE = 15 V, VBE = 0
nA VCE = 3 V, VBE = 0
Emitter/base shortened
nA VCB = 3 V, IE = 0
Open emitter
µA VEB = 0.5 V, IC = 0
Open collector
VCE = 4 V, IC = 50 mA
VCE = 3 V, IC = 90 mA
Pulse measured
4.2
General AC Characteristics
Table 4 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT
18
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB
–
Values
Typ. Max.
24
–
0.48 0.8
1.2
–
1.7
–
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 90 mA,
f = 1 GHz
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
VEB = 0.5 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
10
Revision 1.0, 2010-10-22