TDA21106 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – High speed Driver with bootstrapping for dual Power MOSFETs

CoreControl ^TM
Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21106
Features
P-DSO-8
• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking more than 4A peak currents for lowest switching losses
• Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC
setting; Low Side MOSFET at 12 V.
• Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON
losses and gate drive losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• High voltage rating on Phase node
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs (Intersil, Analog Devices)
• Floating High Side MOSFET drive
• Footprint compatible to TDA21101G and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s
Type
TDA21106
Package
P-DSO-8
Marking
21106
Ordering Code
Q67042-S4223
Pinout
Top View
GATEHS 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 GATELS
Number Name
1
GATE_HS
2
BOOT
3
PWM
4
GND
5
GATE_LS
6
VCC
7
PVCC
8
PHASE
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
Input to adjust the High Side gate
drive
To be connected to the junction of
the High Side and the Low Side
MOSFET
Rev 2.0
Page 1
Apr, 2004