TDA21101 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – High speed Driver with bootstrapping for dual Power MOSFETs

Preliminary Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21101
Features
P-DSO-8
• Fast rise and fall times for frequencies up to 2 MHz
• Capable of sinking and sourcing of more than 4 A peak current for lowest
switching losses
• Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates
up to 12 V for lowest on-losses
• Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin
for optimizing ON losses, gate drive losses, and switching losses
• Integrates the bootstrap diode for reducing the part count
• Prevents from cross-conducting by adaptive gate drive control
• Protects the driver against over-temperature
• Supports shut-down mode for very low quiescent current through three-state input
• Compatible to standard PWM controller ICs
• Floating High Side MOSFET drive up to 30 V
• Operates with V _PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage
• 1:1 compatible to HIP6601A and HIP6601B
• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and
Notebook CPU supplies
Type
Package
TDA21101 P-DSO-8
Marking
21101G
Ordering Code
Q67042-S4170-A101
Pinout
Top View
GATEHS 1
BOOT 2
PWM 3
GND 4
8 PHASE
7 PVCC
6 VCC
5 GATELS
Number Name
1
GATE_HS
2
BOOT
3
PWM
4
GND
5
GATE_LS
6
VCC
7
PVCC
8
PHASE
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
High impedance input to adjust the
High Side gate drive
This pin connects to the junction of
the High Side and the Low Side
MOSFET
Page 1
2002-03-28