T360N Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Netz-Thyristor Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T360N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Per_eio_ndi_nsc_dh_ae_tV_eo_nrwärts- und Rückwärts-Spitzensperrspannung T_vj = -40°C... T_{vj max}
Elektrische Eigenschaften ^{repetitive peak forward off-state and reverse voltages}
Vorwärts-Stossspitzensperrspannung
T_vj = -40°C... T_{vj max}
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
T_vj = +25°C... T_{vj max}
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
T_C = 85 °C
Dauergrenzstrom
average on-state current
T_C = 55 °C, θ = 180°sin, t_P = 10 ms
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 1 A, di_G/dt = 1 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter C
5.Kennbuchstabe / 5^th letter F
V_DRM,V_RRM 2000
2200
V_DSM
2000
2200
V_RSM
2100
2300
I_TRMSM
I_TAVM
I_TAVM
I_TRMS
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
2400 V
2600 V
2400 V
2600 V
2500 V
2700 V
550 A
360 A
510 A
800 A
5000 A
4500 A
125 10³ A²s
100 10³ A²s
60 A/µs
500 V/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie 100 A ≤ i_T ≤ 1800 A
on-state characteristic
v _T = A + B ⋅ i_T + C ⋅ ln (i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T_vj = T_{vj max}, i_T = 1100 A
T_vj = T_{vj max}, i_T = 300 A
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = 25 °C, v_D = 12V
T_vj = 25 °C, v_D = 12V
T_vj = T_{vj max}, v_D = 12V
T_vj = T_{vj max}, v_D = 0,5 V_DRM
T_vj = T_{vj max}, v_D = 0,5 V_DRM
v_T
V_(TO)
r_T
A=
B=
C=
D=
I_GT
V_GT
I_GD
V_GD
max.
max.
2,88 V
1,54 V
1,1 V
1,6 mΩ
6,180E-01
2,031E-03
1,451E-01
-2,943E-02
max. 200 mA
max.
2V
max.
max.
max.
10 mA
5 mA
0,2 V
T_vj = 25°C, v_D = 12V
I_H
max. 300 mA
T_vj = 25°C, v_D = 12V, R_GK ≥ 10 Ω
I_L
i_GM = 1 A, di_G/dt = 1 A/µs, t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
i_D, i_R
DIN IEC 60747-6
t_gd
T_vj = 25 °C, i_GM = 1 A, di_G/dt = 1 A/µs
max. 1200 mA
max. 50 mA
max.
4 µs
prepared by: H.Sandmann
approved by: M.Leifeld
IFBIP D AEC / 2009-12-07, H.Sandmann
date of publication: 2009-12-07
revision:
3.1
A 32/09
Seite/page 1/10