T358N Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Netz-Thyristor Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T358N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Per_eio_ndi_nsc_dh_ae_tV_eo_nrwärts- und Rückwärts-Spitzensperrspannung T_vj = -40°C... T_{vj max}
Elektrische Eigenschaften ^{repetitive peak forward off-state and reverse voltages}
Vorwärts-Stoßspitzensperrspannung
T_vj = -40°C... T_{vj max}
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
T_vj = +25°C... T_{vj max}
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
T_C = 85 °C
T_C = 69 °C
Stoßstrom-Grenzwert
surge current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 1 A, di_G/dt = 1 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter F
V_DRM,V_RRM 1200
1400
V_DSM
1200
1400
V_RSM
1300
1500
I_TRMSM
I_TAVM
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
1600 V
1800 V
1600 V
1800 V
1700 V
1900 V
700 A
358 A
450 A
5200 A
4600 A
135 10³ A²s
106 10³ A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie 100 A ≤ i_T ≤ 1700 A
on-state characteristic
v _T = A + B ⋅ i_T + C ⋅ ln (i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T_vj = T_{vj max} , i_T = 1200 A
T_vj = T_{vj max} , i_T = 200 A
T_vj = T_{vj max}
v_T
V_(TO)
max.
max.
2,07 V
1,10 V
0,85 V
T_vj = T_{vj max}
r_T
0,9 mΩ
T_vj = T_{vj max}
T_vj = 25 °C, v_D = 12V
A=
1,042E+00
B=
4,125E-04
C=
-1,077E-01
D=
3,721E-02
I_GT
max. 200 mA
T_vj = 25 °C, v_D = 12V
V_GT
max.
2V
T_vj = T_{vj max} , v_D = 12V
T_vj = T_{vj max} , v_D = 0,5 V_DRM
T_vj = T_{vj max} , v_D = 0,5 V_DRM
I_GD
max. 10 mA
max.
5 mA
V_GD
max. 0,2 V
T_vj = 25°C, v_D = 12V
I_H
max. 300 mA
T_vj = 25°C, v_D = 12V, R_GK ≥ 10 Ω
I_L
i_GM = 1 A, di_G/dt = 1 A/µs, t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
DIN IEC 60747-6
T_vj = 25 °C, i_GM = 1 A
di_G/dt = 1 A/µs
i_D, i_R
t_gd
max. 1200 mA
max.
max.
50 mA
3 µs
prepared by: H.Sandmann
approved by: J.Przybilla
A 513 MT3 / 20.01.88, K.-A. Rüther
date of publication: 2007-09-03
revision:
1
A 10/88
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