T348N Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Netz-Thyristor Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T348N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Per_eio_ndi_nsc_dh_ae_tV_eo_nrwärts- und Rückwärts-Spitzensperrspannung T_vj = -40°C... T_{vj max}
Elektrische Eigenschaften ^{repetitive peak forward off-state and reverse voltages}
Vorwärts-Stoßspitzensperrspannung
T_vj = -40°C... T_{vj max}
non-repetitive peak forward off-state voltage
V_DRM,V_RRM
V_DSM
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
T_vj = +25°C... T_{vj max}
V_RSM
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T_C = 85 °C
T_C = 77 °C
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 0,6 A
di_G/dt = 0,6 A/µs
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter F
I_TRMSM
I_TAVM
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
200 V
400 V
600 V
200 V
400 V
600 V
250 V
450 V
650 V
600 A
348 A
382 A
4600 A
4000 A
106 10³ A²s
80 10³ A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie 100A ≤ i_T ≤ 1700A
on-state characteristic
v _T = A + B ⋅ i_T + C ⋅ ln (i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T_vj = T_{vj max} , i_T = 1100 A
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = 25 °C, v_D = 12V
v_T
V_(TO)
r_T
A=
B=
C=
D=
I_GT
max. 1,92 V
1,00 V
0,70 mΩ
1,220E+00
-1,061E-04
-1,838E-01
6,326E-02
max. 150 mA
T_vj = 25 °C, v_D = 12V
V_GT
max.
2V
T_vj = T_{vj max} , v_D = 12V
T_vj = T_{vj max} , v_D = 0,5 V_DRM
T_vj = T_{vj max} , v_D = 0,5 V_DRM
I_GD
max. 10 mA
max.
5 mA
V_GD
max. 0,25 V
T_vj = 25°C, v_D = 12V
I_H
max. 200 mA
T_vj = 25°C, v_D = 12V, R_GK ≥ 10 Ω
i_GM = 0,6 A , di_G/dt = 0,6 A/µs
t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
DIN IEC 60747-6
T_vj = 25 °C, i_GM = 0,6 A
di_G/dt = 0,6 A/µs
I_L
i_D, i_R
t_gd
max. 800 mA
max. 20 mA
max.
3 µs
prepared by: H.Sandmann
approved by: J.Przybilla
A 513 MT3 / 15.07.87, K.-A. Rüther
date of publication: 2007-09-03
revision:
1
A 23/87
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