T2510N Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Netz-Thyristor Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T2510N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Per_eio_ndi_nsc_dh_ae_tV_eo_nrwärts- und Rückwärts-Spitzensperrspannung T_vj = -40°C... T_{vj max}
repetitive peak forward off-state and reverse voltages
Elektrische Eigenschaften
Vorwärts-Stossspitzensperrspannung
T_vj = -40°C... T_{vj max}
non-repetitive peak forward off-state voltage
V_DRM,V_RRM
V_DSM
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
T_vj = +25°C... T_{vj max}
V_RSM
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
I_TRMSM
T_C = 85 °C
I_TAVM
T_C = 55 °C, θ = 180°sin, t_P = 10 ms I_TAVM
I_TRMS
T_vj = 25 °C °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 1A, di_G/dt = 1A/µs
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter F
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie 600 A ≤ i_T ≤ 12600 A
on-state characteristic
v _T = A + B ⋅ i_T + C ⋅ ln (i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
1) 600V auf Anfrage / 600V on request
T_vj = T_{vj max} , i_T = 6 kA
T_vj = T_{vj max} , i_T = 2,5 kA
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = T_{vj max}
T_vj = 25 °C, v_D = 12V
v_T
V_(TO)
r_T
A=
B=
C=
D=
I_GT
T_vj = 25 °C, v_D = 12V
V_GT
T_vj = T_{vj max} , v_D = 12V
T_vj = T_{vj max} , v_D = 0,5 V_DRM
T_vj = T_{vj max} , v_D = 0,5 V_DRM
I_GD
V_GD
T_vj = 25°C, v_D = 12V
I_H
T_vj = 25°C, v_D = 12V, R_GK ≥ 10 Ω
i_GM = 1A, di_G/dt = 1A/µs, t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
DIN IEC 60747-6
T_vj = 25 °C, i_GM = 1A, di_G/dt = 1A/µs
I_L
i_D, i_R
t_gd
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication: 2008-09-15
revision:
3.0
200 V
400 V
600 V 1)
200 V
400 V
600 V
250 V
450 V
650 V
4900 A
2510 A
3410 A
5350 A
46000 A
42000 A
10580 10³ A²s
8820 10³ A²s
200 A/µs
1000 V/µs
max.
max.
1,22 V
0,96 V
0,75 V
0,072 mΩ
8,549E-01
4,318E-05
-3,346E-02
5,182E-03
max. 250 mA
max. 1,5 V
max.
max.
max.
10 mA
5 mA
0,2 V
max. 300 mA
max. 1200 mA
max. 150 mA
max.
4 µs
IFBIP D AEC / 2008-09-15, H.Sandmann A 44/08
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