T1220N Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Netz-Thyristor Phase Control Thyristor

N
Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T1220N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Per_eio_ndi_nsc_dh_ae_tV_eo_nrwärts- und Rückwärts-Spitzensperrspannung T_vj = -40°C... T_{vj max}
repetitive peak forward off-state and reverse voltages
Elektrische Eigenschaften
Vorwärts-Stossspitzensperrspannung
T_vj = -40°C... T_{vj max}
non-repetitive peak forward off-state voltage
V_DRM,V_RRM 2000
2200
V_DSM
2000
2200
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
T_vj = +25°C... T_{vj max}
V_RSM
2100
2300
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
I_TRMSM
T_C = 85 °C
I_TAVM
T_C = 55 °C, θ = 180°sin, t_P = 10 ms I_TAVM
I_TRMS
T_vj = 25 °C °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
T_vj = 25 °C, t_P = 10 ms
T_vj = T_{vj max}, t_P = 10 ms
DIN IEC 60747-6
f = 50 Hz, i_GM = 1 A, di_G/dt = 1 A/µs
T_vj = T_{vj max}, v_D = 0,67 V_DRM
5.Kennbuchstabe / 5^th letter F
I_TSM
I²t
(di_T/dt)_cr
(dv_D/dt)_cr
2400 V
2600 V
2800 V
2400 V
2600 V
2800 V
2500 V
2700 V
2900 V
2625 A
1220 A
1740 A
2740 A
25000 A
22500 A
3125 10³ A²s
2531 10³ A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie 300 A ≤ i_T ≤ 6100 A
on-state characteristic
v _T = A + B ⋅ i_T + C ⋅ ln (i_T + 1) + D ⋅ i_T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T_vj = T_{vj max}, i_T = 3,5 kA
T_vj = T_{vj max}, i_T = 1,0 kA
T_vj = T_{vj max}
v_T
V_(TO)
T_vj = T_{vj max}
r_T
T_vj = T_{vj max}
T_vj = 25 °C, v_D = 12V
A=
B=
C=
D=
I_GT
T_vj = 25 °C, v_D = 12V
V_GT
T_vj = T_{vj max}, v_D = 12V
T_vj = T_{vj max}, v_D = 0,5 V_DRM
T_vj = T_{vj max}, v_D = 0,5 V_DRM
I_GD
V_GD
T_vj = 25°C, v_D = 12V
I_H
T_vj = 25°C, v_D = 12V, R_GK ≥ 10 Ω
I_L
i_GM = 1 A, di_G/dt = 1 A/µs, t_g = 20 µs
T_vj = T_{vj max}
v_D = V_DRM, v_R = V_RRM
i_D, i_R
DIN IEC 60747-6
t_gd
T_vj = 25 °C, i_GM = 1 A, di_G/dt = 1 A/µs
max.
max.
2,13 V
1,38 V
1,0 V
0,275 mΩ
9,687E-01
2,165E-04
-9,652E-03
8,131E-03
max. 250 mA
max.
2V
max.
max.
max.
10 mA
5 mA
0,25 V
max. 500 mA
max. 2500 mA
max. 200 mA
max. 4,5 µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication: 2008-09-19
revision:
1.0
IFBIP D AEC, 2008-09-19, H.Sandmann
A 54/08
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