SPW47N65C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Worldwide best R _ds,on in TO247
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
Q _g,typ
SPW47N65C3
650 V
0.07 Ω
255 nC
PG-TO247-3-1
Type
SPW47N65C3
Package
PG-TO247-3-1
Marking
47N65C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
I_D
I _D,pulse
E _AS
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=3.5 A, V _DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E _AR
I _D=7 A, V _DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I _AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V _GS
V _DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P _tot
T _C=25 °C
T _j, T _stg
M3 and M3.5 screws
Value
47
30
141
1800
1
7
50
±20
±30
415
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.2
page 1
2008-02-12
Please note the new package dimensions arccording to PCN 2009-134-A