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| SPW47N60S5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor | |||
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Final data
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO 247
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPW47N60S5
VDS
RDS(on)
ID
600 V
0.07 â¦
47 A
P-TO247
Type
SPW47N60S5
Package
P-TO247
Ordering Code
Q67040-S4240
Marking
47N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
Unit
A
47
30
94
1800
mJ
1
20
A
±20
V
±30
415
W
-55... +150
°C
Page 1
2003-07-02
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