SPW35N60CFD Datasheet, PDF (1/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPW35N60CFD
600 V
0.118 Ω
34 A
PG-TO247
Type
SPW35N60CFD
Package
PG-TO247
Ordering Code Marking
Q67045A5053 35N60CFD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
I _D,pulse
E _AS
E _AR
I _AR
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=10 A, V _DD=50 V
I _D=20 A, V _DD=50 V
Drain source voltage slope
dv /dt
I _D=34.1 A, V _DS=480 V,
T _j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I _S=34.1 A, V _DS=480 V,
T _j=125 °C
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Value
34.1
21.6
85
1300
1
20
80
40
600
±20
±30
313
-55 ... 150
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Rev. 1.2
page 1
2005-06-28