SPW35N60C3 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V _DS @ T _j,max
R _DS(on),max
I_D
SPW35N60C3
650 V
0.1 Ω
34.6 A
P-TO247
Type
SPW35N60C3
Package
P-TO247
Ordering Code Marking
Q67040-S4673 35N60C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current¹⁾
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
I _D,pulse
E _AS
E _AR
I _AR
T _C=100 °C
T _C=25 °C
I _D=17.3 A, V _DD=50 V
I _D=34.6 A, V _DD=50 V
Drain source voltage slope
dv /dt
I _D=34.6 A,
V _DS=480 V, T _j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
static
V _GS
AC (f >1 Hz)
P _tot
T _C=25 °C
T _j, T _stg
Rev. 1.0
page 1
Value
34.6
21.9
103.8
1500
1.5
34.6
50
±20
±30
313
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2004-05-10