SPW24N60C3_08 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPW24N60C3
V_DS @ T_jmax 650 V
R_DS(on)
0.16 Ω
I_D
24.3 A
PG-TO247
Type
SPW24N60C3
Package
PG-TO247
Ordering Code
Q67040-S4640
Marking
24N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 10 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 24.3 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Gate source voltage static
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
P_tot
Operating and storage temperature
Reverse diode dv/dt ⁴⁾
T_j , T_stg
dv/dt
Value
24.3
15.4
72.9
780
1
24.3
±20
±30
240
-55... +150
15
Unit
A
mJ
A
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A