SPW24N60C3 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOS Power Transistor

CoolMOS^TM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V _DS @ T _j,max
R _DS(on),max
I_D
SPW24N60C3
650 V
0.16 Ω
24.3 A
P-TO247
Type
SPW24N60C3
Package
P-TO247
Ordering Code Marking
Q67040-S4640 24N60C3
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse
Symbol Conditions
I_D
T _C=25 °C
I _D,pulse
E _AS
T _C=100 °C
T _C=25 °C
I _D=12.1 A, V _DD=50 V
Avalanche
energy,
repetitive
t
1),2)
AR
E _AR
I _D=24.3 A, V _DD=50 V
Avalanche
current,
repetitive
t
1)
AR
I _AR
Drain source voltage slope
dv /dt
I _D=24.3 A,
V _DS=480 V, T _j=125 °C
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
static
V _GS
AC (f >1 Hz)
P _tot
T _C=25 °C
T _j, T _stg
Rev. 1.0
page 1
Value
24.3
15.4
72.9
780
1.5
24.3
50
±20
±30
240
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2004-04-27