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SPW20N60S5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPW20N60S5
VDS
RDS(on)
ID
600 V
0.19 Ω
20 A
P-TO247
Type
SPW20N60S5
Package
P-TO247
Ordering Code
Q67040-S4238
Marking
20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
Unit
A
20
13
40
690
mJ
1
20
A
±20
V
±30
208
W
-55... +150
°C
Rev. 2.1
Page 1
2004-03-30