SPW11N80C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
SPW11N80C3
V_DS
R_DS(on)
I_D
800 V
0.45 Ω
11 A
P-TO247
Type
SPW11N80C3
Package
P-TO247
Ordering Code
Q67040-S4440
Marking
11N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 2.2 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 11 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Reverse diode dv/dt
dv/dt
I_S=11A, V_DS=480V, T_j=125°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
V_GS
V_GS
P_tot
T_j , T_stg
Page 1
Value
Unit
A
11
7.1
33
470
mJ
0.2
11
A
6
V/ns
±20
V
±30
156
W
-55... +150
°C
2003-07-03