 English |
|
|
|
|
|
|
|
| SPW11N60S5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
| |||
|
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPW11N60S5
VDS
RDS(on)
ID
600 V
0.38 â¦
11 A
P-TO247
Type
SPW11N60S5
Package
P-TO247
Ordering Code
Q67040-S4239
Marking
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
Unit
A
11
7
22
340
mJ
0.6
11
A
±20
V
±30
125
W
-55... +150
°C
Rev. 2.1
Page 1
2004-03-30
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese