SPU30N03S2-08 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Low On-Resistance R_DS(on)
• Excellent Gate Charge x R_DS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPU30N03S2-08
Product Summary
V_DS
30 V
R_DS(on) 8.2 mΩ
I_D
30 A
P- TO251 -3-1
Type
Package
Ordering Code Marking
SPU30N03S2-08 P- TO251 -3-1 Q67042-S4140 2N0308
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current¹⁾
I_D
TC=25°C¹⁾
Pulsed drain current
T_C=25°C
Avalanche energy, single pulse
I_D=30 A , V_DD=25V, R_GS=25Ω
Repetitive avalanche energy, limited by T_jmax²⁾
Reverse diode dv/dt
I_S=30A, V_DS=24V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I_{D puls}
E_AS
E_AR
dv/dt
V_GS
P_tot
T_j , T_stg
Value
30
30
120
250
12
6
±20
125
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-30