SPP80P06PG Datasheet, PDF (1/11 Pages) Infineon Technologies AG – SIPMOSÒ Power-Transistor Features Enhancement mode Avalanche rated

SPP80P06P G
SPB80P06P G
SIPMOS^® Power-Transistor
Features
Product Summary
• P-Ch·aPnn-Cehl annel
• Enha_·n_Ec_ne_hm_ae_nn_ct_em_mo_ed_ne_{t mode}
• Avalanche rated
• dv/dt^·r^Aat^ve^ad^{lanche rated}
• 175°^·C^do^vp^/de^tra^rati^tn^eg^dtemperature
Drain source voltage
V_DS
-60 V
W Drain-source on-state resistance RDS(on) 0.023
Continuous drain current
I_D
-80 A
• Pb-fr·ee17le5a°Cd polpaetirnagti;nRgotHems pceormaptuliraent
• Qualified according to AEC Q101
Type
Package Lead free
SPP80P06P G PG-TO220-3 Yes
SPB80P06P G PG-TO263-3 Yes
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_{C =} 25 °C, ¹⁾
T_C = 100 °C
Pulsed drain current
T_C = 25 °C
Avalanche energy, single pulse
W I_D = -80 A , V_DD = -25 V, R_GS = 25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_{D puls}
E_AS
E_AR
dv/dt
I_S = -80 A, V_DS = -48 , di/dt = 200 A/µs,
T_jmax = 175 °C
Gate source voltage
Power dissipation
T_C = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Pin 1 PIN 2/4 PIN 3
G
D
S
Value
-80
-64
-320
823
34
6
Unit
A
mJ
kV/µs
±20
V
340
W
-55...+175
°C
55/175/56
1Current _{limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry ID = -91A}
Rev 1.4
Page 1
2009-11-19