SPP80N06S-08 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor

SIPMOS^® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
P-TO263-3-2
SPB80N06S-08
SPI80N06S-08, SPP80N06S-08
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
7.7 mΩ
80 A
P-TO262-3-1
P-TO220-3-1
• Repetive Avalanche up to
T_jmax = 175 °C
• dv /dt rated
V_DD=30 V, I_D=80 A, V_GS=10 V, R_G=2.4 Ω
Type
SPB80N06S-08
SPI80N06S-08
SPP80N06S-08
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
Ordering Code Marking
Q670_T6_C0=-S2651°8C5, _{V GS}1=N10060V8
Q670_T6_C0=-S160108°7C, _V 1_GSN=016008V
Q67060-S6186 1N0608
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
80
A
T _C=100 °C, V _GS=10 V
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=80 A, R _GS=25 Ω,
V _DD=25 V
Avalanche energy, periodic²⁾
E _AR
T _j≤175 °C
Reverse diode dv /dt ²⁾
dv /dt
I _D=80 A, V _DS=40 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Rev. 1.0
page 1
80
320
700
mJ
30
6
kV/µs
±20
V
300
W
-55 ... +175
°C
55/175/56
2004-11-30