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| SPP24N60C3 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO 220
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPP24N60C3
VDS @ Tjmax 650 V
RDS(on)
0.16 â¦
ID
24.3 A
P-TO220-3-1
Type
SPP24N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4639
Marking
24N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 24.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage static
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
Unit
A
24.3
15.4
72.9
780
mJ
1
24.3
A
±20
V
±30
240
W
-55... +150
°C
Rev. 2.0
Page 1
2004-03-02
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