SPP21N50C3_09 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

SPP21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
V_DS @ T_jmax 560
V
R_DS(on)
0.19 Ω
I_D
21 A
PG-TO220FP
P G-TO262 PG-TO220
3
12
Type
SPP21N50C3
SPI21N50C3
SPA21N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4565
Q67040-S4564
SP000216364
Marking
21N50C3
21N50C3
21N50C3
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=10A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=21A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁷⁾
Symbol
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPP_I
SPA
21
13.1
63
690
21¹⁾
13.1¹⁾
63
690
1
1
21
21
±20
±20
±30
±30
208
34.5
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22