SPP21N50C3 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
P-TO220-3-31
P-TO262-3-1
V_DS @ T_jmax 560
V
R_DS(on)
0.19 Ω
I_D
21 A
P-TO263-3-2 P-TO220-3-1
• Periodic avalanche rated
• Extreme dv/dt rated
1 ²³
• Ultra low effective capacitances ^P-TO220-3-31
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP21N50C3
SPB21N50C3
SPI21N50C3
SPA21N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4565
P-TO263-3-2 Q67040-S4566
P-TO262-3-1 Q67040-S4564
P-TO220-3-31 _Q67040-S4585
Marking
21N50C3
21N50C3
21N50C3
21N50C3
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=10A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=21A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Symbol
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPSP_PB__BI SPA
21
13.1
63
690
21¹⁾
13.1¹⁾
63
690
1
1
21
21
±20
±20
±30
±30
208
34.5
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-07-02