SPP20N65C3_07 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

SPP20N65C3, SPA20N65C3
SPI20N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
PG-TO262
V _DS
R_DS(on)
I_D
650 V
0.19 Ω
20.7 A
PG-TO220FP PG-TO220
3
12
P-TO220-3-31
Type
SPP20N65C3
SPA20N65C3
SPI20N65C3
Package
PG-TO220
PG-TO220FP
PG-TO262
Ordering Code
Q67040-S4556
SP000216362
Q67040-S4560
Marking
20N65C3
20N65C3
20N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=3.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=7A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
Unit
SPP_I SPA
20.7
13.1
A
20.7¹⁾
13.1¹⁾
62.1
62.1 A
690
690 mJ
1
1
7
7
A
±20
±20 V
±30
±30
208
34.5 W
-55...+150
°C
Rev. 3.0
Page 1
2007-08-30