SPP20N60S5_01 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Preliminary data
SPP20N60S5
SPB20N60S5
Cool MOS™=Power Transistor
•=New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
•=Improved periodic avalanche rating
• Extreme dv/dt rated
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx1N60S5/SPBx1N60S5
COOLMOS
Power Semiconductors
Product Summary
V_DS @ T_jmax 650 V
R_DS(on)
0.19 Ω
I_D
20 A
P-TO263-3-2
P-TO220-3-1
Type
Package
Ordering Code Marking
SPP20N60S5
P-TO220-3-1 Q67040-S4751 20N60S5
SPB20N60S5
P-TO263-3-2 Q67040-S4171 20N60S5
G,1
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_C=25°C
T_C=100°C
Pulsed drain current ¹⁾
T_C=25°C
Avalanche energy, single pulse
I_D = 10 A, V_DD = 50 V
Avalanche energy (repetitive, limited by T_jmax)
I_D = 20 A, V_DD = 50 V
Avalanche current (repetitive, limited by T_jmax)
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
E_AR
I_AR
dv/dt
I_S=20A, V_DS<V_DSS, di/dt=100A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_C=25°C
Operating and storage temperature
V_GS
P_tot
T_j , T_stg
Value
20
13
40
690
1
20
6
±20
208
-55... +150
D,2
S,3
Unit
A
mJ
A
kV/µs
V
W
°C
1
2001-07-25