 English |
|
|
|
|
|
|
|
| SPP20N60S5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
| |||
|
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO 220
⢠Ultra low gate charge
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
⢠Ultra low effective capacitances
⢠Improved transconductance
SPP20N60S5
SPB20N60S5
VDS
RDS(on)
ID
600 V
0.19 â¦
20 A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
23
1
Type
SPP20N60S5
SPB20N60S5
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4751
Q67040-S4171
Marking
20N60S5
20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
20
13
40
690
1
20
±20
±30
208
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese