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SPP20N60C3 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Cool MOS Power Transistor | |||
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Final data
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Cool MOS⢠Power Transistor
Feature
⢠New revolutionary high voltage technology
⢠Worldwide best RDS(on) in TO 220
⢠Ultra low gate charge
P-TO220-3-31
P-TO262-3-1
VDS @ Tjmax 650
V
RDS(on)
0.19 â¦
ID
20.7 A
P-TO263-3-2 P-TO220-3-1
⢠Periodic avalanche rated
⢠Extreme dv/dt rated
3
12
⢠High peak current capability
P-TO220-3-31
⢠Improved transconductance
⢠P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP20N60C3
SPB20N60C3
SPI20N60C3
SPA20N60C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4398
P-TO263-3-2 Q67040-S4397
P-TO262-3-1 Q67040-S4550
P-TO220-3-31 Q67040-S4410
Marking
20N60C3
20N60C3
20N60C3
20N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=20A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPSP_PB__BI SPA
20.7
13.1
20.71)
13.11)
62.1
62.1
690
690
1
1
20
20
±20
±20
±30
±30
208
34.5
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-10-08
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