SPP18P06PH Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to AEC Q101
Product Summary
V_DS
R_DS(on),max
I_D
SPP18P06P H
-60 V
0.13 
-18.7 A
PG-TO220-3-1
Type
Package
Tape and reel information
SPP18P06PH PG-TO220-3
50pcs/tube
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=100 °C
T _A=25 °C
Marking
18P06P
Lead free
Yes
Value
Unit
steady state
-18.7
A
-13.2
-74.8
Avalanche energy, single pulse
E _AS
I _D=18.7 A, R _GS=25 
151
mJ
Avalanche
T_jmax
energy,
periodic
limited by
E _AR
8
Reverse diode dv /dt
dv /dt
I _D=18.7 A, V _DS=48 V,
di /dt =-200 A/µs,
T _j,max=175 °C
-6
kV/µs
Gate source voltage
V _GS
±20
V
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
P _tot
T _j, T _stg
T _A=25 °C¹⁾
81.1
W
"-55 ... +175"
°C
Class 1C( >1000V <2000V)
260 °C
IEC climatic category; DIN IEC 68-1
55/150/56
Rev1.92
page 1
2014-11-21