SPP17N80C3 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP17N80C3, SPB17N80C3
SPA17N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
V_DS
R_DS(on)
I_D
P-TO220-3-31 P-TO263-3-2
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
1 ²³
P-TO220-3-31
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP17N80C3
SPB17N80C3
SPA17N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4353
P-TO263-3-2 Q67040-S4354
P-TO220-3-31 Q67040-S4441
Marking
17N80C3
17N80C3
17N80C3
800 V
0.29 Ω
17 A
P-TO220-3-1
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=3.4A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=17A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP_B _SPA
17
17¹⁾
11
11¹⁾
51
51
670
670
0.5
0.5
17
17
±20
±20
±30
±30
208
42
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-07-03