SPP16N50C3_07 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

SPP16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax 560 V
R_DS(on)
0.28 Ω
I_D
16 A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances
• Improved transconductance
3
12
P-TO220-3-31
P-TO220-3-1
23
1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
Marking
16N50C3
16N50C3
16N50C3
Maximum Ratings
Parameter
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=8, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=16A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁶⁾
Symbol
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPP_I
SPA
16
16¹⁾
10
10¹⁾
48
48
460
460
0.64
0.64
16
16
±20
±20
±30
±30
160
34
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.0
Page 1
2007-08-30