SPP15P10P_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS® Small-Signal-Transistor Features P-Channel Enhancement mode

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPP15P10P G
SPD15P10P G
-100 V
0.24 Ω
-15 A
PG-TO220-3
PG-TO252-3
Type
SPP15P10P G
SPD15P10P G
Package
PG-TO220-3
PG-TO252-3
Marking
15P10P
15P10P
Lead free Packing
Yes
Non dry
Yes
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=-15 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
-15
-10.6
-60
230
±20
128
-55 ... 175
1C (1kV to 2kV)
260 °C
55/175/56
Unit
A
mJ
V
W
°C
Rev 1.6
page 1
2009-08-25