SPP15P10PLH Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Product Summary
V _DS
R _DS(on),max
I_D
SPP15P10PL H
-100 V
0.20 :
-15 A
PG-TO220-3
Type
SPP15P10PL H
Package
PG-TO220-3
Marking
15P10PL
Lead free Packing
Yes
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=-15 A, R _GS=25 :
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
-15
A
11.3
-60
230
mJ
±20
V
128
W
-55 ... 175
°C
1C (1kV to 2kV)
260 °C
55/175/56
Rev 1.4
page 1
2011-09-01