SPP15P10PLG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPP15P10PL G
SPD15P10PL G
-100 V
0.20 Ω
-15 A
PG-TO220-3
PG-TO252-3
Type
Package
SPP15P10PL G PG-TO220-3
SPD15P10PL G PG-TO252-3
Marking
15P10PL
15P10PL
Lead free Packing Tape and Reel information
Yes
Non dry 50 pcs / tube
Yes
Non dry 1000 pcs / reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=100 °C
I _D,pulse T _C=25 °C
E _AS
I _D=-15 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
-15
A
11.3
-60
230
mJ
±20
V
128
W
-55 ... 175
°C
1C (1kV to 2kV)
260 °C
55/175/56
Rev 1.3
page 1
2009-10-27