SPP15N60CFD_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

SPP15N60CFD
CoolMOS^TM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
Product Summary
V _DS @ Tjmax
R _DS(on),max
I_D
• Extreme dv /dt rated
• High peak current capability
• Qualified for industrial grade applications according to JEDEC¹⁾
650 V
0.330 "
13.4 A
PG-TO220
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Type
SPP15N60CFD
Package
PG-TO220
Marking
15N60CFD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
I_D
I _D,pulse
T _C=25 °C
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=6.7 A, V _DD=50 V
Avalanche energy, repetitive^2),3)
E _AR
I _D=13.4 A, V _DD=50 V
Avalanche current, repetitive^2),3)
Drain source voltage slope
I _AR
dv /dt
I _D=13.4 A,
V _DS=480 V, T _j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I _S=13.4 A, V _DS=480 V,
T _j=125 °C
Gate source voltage
Power dissipation
V _GS
static
AC (f >1 Hz)
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Mounting torque
M3 & 3.5 screws
Value
13.4
8.4
33
460
0.8
13.4
80
40
600
±20
±30
156
-55 ... 150
60
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.3
page 1
2009-11-30