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SPP15N60CFD Datasheet, PDF (1/12 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode | |||
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CoolMOSTM Power Transistor
Features
⢠Intrinsic fast-recovery body diode
⢠Extremely low reverse recovery charge
⢠Ultra low gate charge
⢠Extreme dv /dt rated
⢠High peak current capability
⢠Qualified according to JEDEC1) for target applications
SPP15N60CFD
Product Summary
V DS @ Tjmax
R DS(on),max
ID
650 V
0.330 â¦
13.4 A
PG-TO220
CoolMOS CFD designed for:
⢠Softswitching PWM Stages
⢠LCD & CRT TV
Type
SPP15N60CFD
Package
PG-TO220
Marking
15N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
I D=6.7 A, V DD=50 V
Avalanche energy, repetitive2),3)
E AR
I D=13.4 A, V DD=50 V
Avalanche current, repetitive2),3)
Drain source voltage slope
I AR
dv /dt
I D=13.4 A,
V DS=480 V, T j=125 °C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I S=13.4 A, V DS=480 V,
T j=125 °C
Gate source voltage
Power dissipation
V GS
static
AC (f >1 Hz)
P tot
T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 & 3.5 screws
Value
13.4
8.4
33
460
0.8
13.4
80
40
600
±20
±30
156
-55 ... 150
60
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.2
page 1
2007-08-28
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