SPP15N60C3_09 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax
R_DS(on)
I_D
• Periodic avalanche rated
PG-TO220FP PG-TO262
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
3
12
P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V
0.28 Ω
15 A
PG-TO220
Type
SPP15N60C3
SPI15N60C3
SPA15N60C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4600
Q67040-S4601
SP000216325
Marking
15N60C3
15N60C3
15N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=7.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=15A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
Reverse diode dv/dt ⁶⁾
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
dv/dt
Value
SPP_I
SPA
15
15¹⁾
9.4
9.4¹⁾
45
45
460
460
Unit
A
A
mJ
0.8
0.8
15
15
±20
±20
±30
±30
156
34
-55...+150
15
A
V
W
°C
V/ns
Rev. 3.2
page 1
2009-12-22