SPP12N50C3 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS @ T_jmax 560 V
R_DS(on)
0.38 Ω
I_D
11.6 A
• Periodic avalanche rated
P-TO220-3-31 P-TO262
P-TO263-3-2 P-TO220-3-1
• Extreme dv/dt rated
2
• Ultra low effective capacitances
3
12
• Improved transconductance
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
23
1
Type
SPP12N50C3
SPB12N50C3
SPI12N50C3
SPA12N50C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4579
P-TO263-3-2 Q67040-S4641
P-TO262
Q67040-S4578
P-TO220-3-31 Q67040-S4577
Marking
12N50C3
12N50C3
12N50C3
12N50C3
Maximum Ratings
Parameter
Symbol
Value
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=5.5A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=11.6A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
SPP_B_I SPA
11.6
7
11.6¹⁾
7¹⁾
34.8
34.8
340
340
0.6
0.6
11.6
11.6
±20
±20
±30
±30
125
33
-55...+150
Unit
A
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-29