SPP11N80C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
V_DS
R_DS(on)
I_D
800 V
0.45 Ω
11 A
• Periodic avalanche rated
P-TO220-3-31 P-TO220-3-1
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
1 ²³
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N80C3
SPA11N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4438
P-TO220-3-31 Q67040-S4439
Marking
11N80C3
11N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=2.2A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=11A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP
SPA
11
11¹⁾
7.1
7.1¹⁾
33
33
470
470
Unit
A
A
mJ
0.2
0.2
11
11 A
±20
±20 V
±30
±30
156
41 W
-55...+150
°C
Page 1
2003-07-02