SPP11N60S5_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor Feature New revolutionary high voltage technology

Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPP11N60S5
SPI11N60S5
V_DS
R_DS(on)
I_D
600 V
0.38 Ω
11 A
PG-TO262
PG-TO220
2
P-TO220-3-1
23
1
Type
SPP11N60S5
SPI11N60S5
Package
PG-TO220
PG-TO262
Ordering Code
Q67040-S4198
Q67040-S4338
Marking
11N60S5
11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 5.5 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 11 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
11
7
22
340
0.6
11
±20
±30
125
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.7
Page 1
2009-11-30